| 1. | Commercial gaas epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible .
市售GaAs外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。 |
| 2. | A study of sige si epitaxial layers growth at the low temperature
类铁电薄膜低温外延层状生长研究 |
| 3. | Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
砷化镓外延层厚度红外干涉测量方法 |
| 4. | Test method for resistivity of silicon epitaxial layers by area contacts three - probe techniques
硅外延层电阻率的面接触三探针.测试方法 |
| 5. | Gallium arsenide epitaxial layer - determination of carrier concentration - voltage - capacitance method
砷化镓外延层载流子浓度电容-电压测量方法 |
| 6. | Testing of materials for semiconductor technology - determination of defect types and defect densities of silicon epitaxial layers
半导体工艺材料的检验.硅晶体外延层缺陷种类和缺陷密 |
| 7. | Testing of semi - conductive inorganic materials ; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
半导体无机材料的试验.用红外线干涉法测量硅外延生长 |
| 8. | Commercial gaas epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible
市售gaas外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。 |
| 9. | The epitaxial layer quality of gaalinp has been specified so well by double - crystal x - ray diffraction that there are many and strong interference in the picture
在掺杂上成功消除mg的记忆效应，使得器件各外延层杂质浓度达到设计的掺杂水平。 |
| 10. | The two structure ldmos was compared by simulation with medici software . the result is that their breakdown voltage is almost the same and the thin epitaxial layer ldmos ? ron is lower
通过medici模拟对两种器件进行比较，结果为两种器件耐压相当，薄外延ldmos导通电阻略低。 |
